jan. 2000 mitsubishi semiconductor M63812P/fp/gp/kp 7-unit 300ma transistor array with clamp diode in7 ? 7 10 in5 ? 5 12 in4 ? 4 13 in3 ? 3 in2 ? 2 15 1 in1 ? 16 gnd ? com commom 9 8 in6 ? 611 ? o1 ? o2 ? o3 ? o4 ? o5 ? o6 ? o7 14 16p4(p) 16p2n-a(fp) 16p2s-a(gp) 16p2z-a(kp) input output package type collector-emitter voltage collector current input voltage clamping diode forward current clamping diode reverse voltage power dissipation operating temperature storage temperature unit: w the seven circuits share the com and gnd. the diode, indicated with the dotted line, is parasitic, and cannot be used. input output gnd 10.5k 10k vz=7v com pin configuration description M63812P, m63812fp, m63812gp and m63812kp are seven-circuit singe transistor arrays with clamping diodes. the circuits are made of npn transistors. both the semicon- ductor integrated circuits perform high-current driving with extremely low input-current supply. features l four package configurations (p, fp, gp and kp) l medium breakdown voltage (bv ceo 3 35v) l synchronizing current (i c(max) = 300ma) l with clamping diodes l with zener diodes l low output saturation voltage l wide operating temperature range (ta=C40 to +85 c) application driving of digit drives of indication elements (leds and lamps) with small signals function the M63812P, m63812fp, m63812gp and m63812kp each have seven circuits consisting of npn transistor.a spike- killer clamping diode is provided between each output pin (collector) and com pin (pin9). the transistor emitters are all connected to the gnd pin (pin 8). the transistors allow syn- chronous flow of 300ma collector current. a maximum of 35v voltage can be applied between the collector and emitter. circuit diagram v ma v ma v w c c C0.5 ~ +35 300 C0.5 ~ +35 300 35 1.47 1.00 0.80 0.78 C40 ~ +85 C55 ~ +125 ratings symbol parameter conditions unit absolute maximum ratings (unless otherwise noted, ta = C40 ~ +85 c) output, h current per circuit output, l v ceo i c v i i f v r p d t opr t stg ta = 25 c, when mounted on board M63812P m63812fp m63812gp m63812kp
jan. 2000 mitsubishi semiconductor M63812P/fp/gp/kp 7-unit 300ma transistor array with clamp diode duty cycle no more than 45% duty cycle no more than 100% duty cycle no more than 30% duty cycle no more than 100% duty cycle no more than 24% duty cycle no more than 100% duty cycle no more than 24% duty cycle no more than 100% ton toff 50% 50% 50% 50% output input (1)pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, zo = 50 w , v ih = 18v (2)input-output conditions : r l =220 w ,vo=35v (3)electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes
jan. 2000 mitsubishi semiconductor M63812P/fp/gp/kp 7-unit 300ma transistor array with clamp diode typical characteristics 400 300 200 100 0 0 100 20 40 60 80 1 ~ 3 4 5 6 7 the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 25 c thermal derating factor characteristics ambient temperature ta ( c) power dissipation pd (w) input characteristics input voltage v i (v) input current i i (ma) duty-cycle-collector characteristics (M63812P) duty cycle (%) collector current ic (ma) duty-cycle-collector characteristics (M63812P) duty cycle (%) collector current ic (ma) duty-cycle-collector characteristics (m63812fp) duty cycle (%) collector current ic (ma) duty-cycle-collector characteristics (m63812fp) duty cycle (%) collector current ic (ma) 2.0 1.5 1.0 0.5 0 0 25 50 75 100 M63812P m63812fp m63812gp m63812kp 0.744 0.520 0.418 0.406 85 4 3 2 1 0 030 25 20 15 10 5 ta=25 ta = ?0 c ta = 25 c ta=85 c 0 100 20 40 60 80 400 300 200 100 0 5 6 7 1 ~ 4 the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 25 c 400 300 200 100 0 0 100 20 40 60 80 1 ~ 2 3 4 5 6 7 the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 85 c 400 300 200 100 0 0 100 20 40 60 80 1 2 3 4 5
jan. 2000 mitsubishi semiconductor M63812P/fp/gp/kp 7-unit 300ma transistor array with clamp diode duty cycle-collector characteristics (m63812gp/kp) duty cycle (%) collector current ic (ma) duty cycle-collector characteristics (m63812gp/kp) duty cycle (%) collector current ic (ma) output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) dc amplification factor collector current characteristics collector current ic (ma) dc amplification factor h fe 400 300 200 100 0 0 100 20 40 60 80 1 ~ 2 4 5 6 7 3 the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 25 c 400 300 200 100 0 0 100 20 40 60 80 1 2 3 4 5 6 7 the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 85 c 250 200 150 100 50 0 0 0.2 0.4 0.6 0.8 ta = 25 c i b = 0.5ma i b = 1ma i b = 1.5ma i b = 3ma i b = 2ma 100 80 60 40 20 0 0 0.05 0.10 0.15 0.20 ta = 25 c v i = 12v v i = 16v v i = 20v v i = 24v v i = 32v v i = 28v 100 80 60 40 20 0 0 0.05 0.10 0.15 0.20 ta = 85 c i i = 2ma ta = 25 c ta = ?0 c 10 0 10 1 10 2 10 1 10 2 10 3 23 57 23 57 2 3 5 7 2 3 5 7 10 3 23 57 v ce 10v ta = 25 c
jan. 2000 mitsubishi semiconductor M63812P/fp/gp/kp 7-unit 300ma transistor array with clamp diode grounded emitter transfer characteristics input voltage v i (v) collector current ic (ma) grounded emitter transfer characteristics input voltage v i (v) collector current ic (ma) clamping diode characteristics forward bias voltage v f (v) forward bisa current i f (ma) 50 40 30 20 10 0 02468 v ce = 4v 12 ta = 85 c ta = 25 c ta = ?0 c 10 250 200 150 100 50 0 04 81216 20 ta = 85 c ta = 25 c ta = ?0 c v ce = 4v 250 200 150 100 50 0 0 0.4 0.8 1.2 1.6 2.0 ta = ?0 c ta = 85 c ta = 25 c
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